HOME > Article > DetailThermally activated hysteresis in high quality graphene/h-BN devices(Thermally-Activated Hysteresis in High Quality Graphene/h-BN Devices)A. R. Cadore, E. Mania, K. Watanabe, T. Taniguchi, R. G. Lacerda, L. C. Campos. Applied Physics Letters 108 [23] 233101. 2016.https://doi.org/10.1063/1.4953162 NIMS author(s)WATANABE, KenjiTANIGUCHI, TakashiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2016-07-11 14:08:51 +0900Updated at: 2024-03-29 20:14:28 +0900