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Surface morphology smoothing of a 2 inch-diameter GaN homoepitaxial layer observed by X-ray diffraction topography

Jaemyung Kim, Okkyun Seo, Satoshi Hiroi, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata.
RSC Advances 10 [4] 1878-1882. 2020.
https://doi.org/10.1039/c9ra08882b
Open Access Royal Society of Chemistry (RSC) (Publisher)

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    Created at: 2020-03-13 03:00:19 +0900Updated at: 2024-03-31 01:21:57 +0900

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