Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene–WSe2 Heterostructures

G. William Burg; Nitin Prasad; Babak Fallahazad; Amithraj Valsaraj; Kyounghwan Kim; Takashi Taniguchi; Kenji Watanabe; Qingxiao Wang; Moon J. Kim; Leonard F. Register; Emanuel Tutuc; G. William Burg; Nitin Prasad; Babak Fallahazad; Amithraj Valsaraj; Kyounghwan Kim; Takashi Taniguchi; Kenji Watanabe; Qingxiao Wang; Moon J. Kim; Leonard F. Register; Emanuel Tutuc

doi:10.1021/acs.nanolett.7b01505

Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene–WSe2 Heterostructures
(Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe2 Heterostructres)

G. William Burg, Nitin Prasad, Babak Fallahazad, Amithraj Valsaraj, Kyounghwan Kim, Takashi Taniguchi, Kenji Watanabe, Qingxiao Wang, Moon J. Kim, Leonard F. Register, Emanuel Tutuc.

Nano Letters 17 [6] 3919-3925. 2017.

https://doi.org/10.1021/acs.nanolett.7b01505

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2017-09-04 22:04:02 +0900Updated at: 2024-03-30 02:25:48 +0900

Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene–WSe2 Heterostructures(Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe2 Heterostructres)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene–WSe2 Heterostructures
(Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe2 Heterostructres)