Transient Response of h-BN-Encapsulated Graphene Transistors: Signatures of Self-Heating and Hot-Carrier Trapping

Jubin Nathawat; Miao Zhao; Chun-Pui Kwan; Shenchu Yin; Nargess Arabchigavkani; Michael Randle; Harihara Ramamoorthy; Guanchen He; Ratchanok Somphonsane; Naoki Matsumoto; Kohei Sakanashi; Michio Kida; Nobuyuki Aoki; Zhi Jin; Yunseob Kim; Gil-Ho Kim; Kenji Watanabe; Takashi Taniguchi; Jonathan P. Bird; Jubin Nathawat; Miao Zhao; Chun-Pui Kwan; Shenchu Yin; Nargess Arabchigavkani; Michael Randle; Harihara Ramamoorthy; Guanchen He; Ratchanok Somphonsane; Naoki Matsumoto; Kohei Sakanashi; Michio Kida; Nobuyuki Aoki; Zhi Jin; Yunseob Kim; Gil-Ho Kim; Kenji Watanabe; Takashi Taniguchi; Jonathan P. Bird

doi:10.1021/acsomega.8b03259

Transient Response of h-BN-Encapsulated Graphene Transistors: Signatures of Self-Heating and Hot-Carrier Trapping

Jubin Nathawat, Miao Zhao, Chun-Pui Kwan, Shenchu Yin, Nargess Arabchigavkani, Michael Randle, Harihara Ramamoorthy, Guanchen He, Ratchanok Somphonsane, Naoki Matsumoto, Kohei Sakanashi, Michio Kida, Nobuyuki Aoki, Zhi Jin, Yunseob Kim, Gil-Ho Kim, Kenji Watanabe, Takashi Taniguchi, Jonathan P. Bird.

ACS Omega 4 [2] 4082-4090. 2019.

https://doi.org/10.1021/acsomega.8b03259

Open Access American Chemical Society (ACS) (Publisher)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2020-03-11 03:00:32 +0900Updated at: 2024-03-31 00:10:07 +0900