HOME > 論文 > 書誌詳細Field-Effect Transistors with Submicrometer Gate Lengths Fabricated fromLaAlO3−SrTiO3-Based HeterostructuresC. Woltmann, T. Harada, H. Boschker, V. Srot, P. A. van Aken, H. Klauk, J. Mannhart. Physical Review Applied 4 [6] 064003. 2015.https://doi.org/10.1103/physrevapplied.4.064003 NIMS著者原田 尚之Materials Data Repository (MDR)上の本文・データセット作成時刻: 2021-03-04 12:48:13 +0900更新時刻: 2024-03-31 11:23:35 +0900
