Giant gate-tunable bandgap renormalization and excitonic effects in a 2D semiconductor

Zhizhan Qiu; Maxim Trushin; Hanyan Fang; Ivan Verzhbitskiy; Shiyuan Gao; Evan Laksono; Ming Yang; Pin Lyu; Jing Li; Jie Su; Mykola Telychko; Kenji Watanabe; Takashi Taniguchi; Jishan Wu; A. H. Castro Neto; Li Yang; Goki Eda; Shaffique Adam; Jiong Lu; Zhizhan Qiu; Maxim Trushin; Hanyan Fang; Ivan Verzhbitskiy; Shiyuan Gao; Evan Laksono; Ming Yang; Pin Lyu; Jing Li; Jie Su; Mykola Telychko; Kenji Watanabe; Takashi Taniguchi; Jishan Wu; A. H. Castro Neto; Li Yang; Goki Eda; Shaffique Adam; Jiong Lu

doi:10.1126/sciadv.aaw2347

Giant gate-tunable bandgap renormalization and excitonic effects in a 2D semiconductor
(Giant gate-tunable band gap renormalization and excitonic effects in a 2D semiconductor)

Zhizhan Qiu, Maxim Trushin, Hanyan Fang, Ivan Verzhbitskiy, Shiyuan Gao, Evan Laksono, Ming Yang, Pin Lyu, Jing Li, Jie Su, Mykola Telychko, Kenji Watanabe, Takashi Taniguchi, Jishan Wu, A. H. Castro Neto, Li Yang, Goki Eda, Shaffique Adam, Jiong Lu.

Science Advances 5 [7] eaaw2347. 2019.

https://doi.org/10.1126/sciadv.aaw2347

Open Access American Association for the Advancement of Science (AAAS) (Publisher)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2019-07-30 03:00:18 +0900Updated at: 2024-03-31 10:26:20 +0900

Giant gate-tunable bandgap renormalization and excitonic effects in a 2D semiconductor(Giant gate-tunable band gap renormalization and excitonic effects in a 2D semiconductor)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Giant gate-tunable bandgap renormalization and excitonic effects in a 2D semiconductor
(Giant gate-tunable band gap renormalization and excitonic effects in a 2D semiconductor)