Short excitonic lifetimes of MoSe<sub>2</sub> monolayers grown by molecular beam epitaxy on the hexagonal boron nitride

Kacper Oreszczuk; Wojciech Pacuski; Aleksander Rodek; Mateusz Raczyński; Tomasz Kazimierczuk; Karol Nogajewski; Takashi Taniguchi; Kenji Watanabe; Marek Potemski; Piotr Kossacki; Kacper Oreszczuk; Wojciech Pacuski; Aleksander Rodek; Mateusz Raczyński; Tomasz Kazimierczuk; Karol Nogajewski; Takashi Taniguchi; Kenji Watanabe; Marek Potemski; Piotr Kossacki

doi:10.1088/2053-1583/ad3135

Short excitonic lifetimes of MoSe₂ monolayers grown by molecular beam epitaxy on the hexagonal boron nitride

Kacper Oreszczuk, Wojciech Pacuski, Aleksander Rodek, Mateusz Raczyński, Tomasz Kazimierczuk, Karol Nogajewski, Takashi Taniguchi, Kenji Watanabe, Marek Potemski, Piotr Kossacki.

2D Materials 11 [2] 025029. 2024.

https://doi.org/10.1088/2053-1583/ad3135

Open Access IOP Publishing (Publisher) Materials Data Repository (MDR)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

MDRavailable Short excitonic lifetimes of MoSe<sub>2</sub> monolayers grown by molecular beam epitaxy on the hexagonal boron nitride

Created at: 2024-03-22 10:26:56 +0900Updated at: 2025-03-11 09:58:34 +0900

Short excitonic lifetimes of MoSe2 monolayers grown by molecular beam epitaxy on the hexagonal boron nitride

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Short excitonic lifetimes of MoSe₂ monolayers grown by molecular beam epitaxy on the hexagonal boron nitride