Self-limiting growth of ultrathin Ga2O3for the passivation of Al2O3/InGaAs interfaces | SAMURAI, NIMS Researchers Directory Service

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Self-limiting growth of ultrathin Ga2O3for the passivation of Al2O3/InGaAs interfaces
(Self-limiting growth of ultrathin Ga2O3 for the passivation of Al2O3/InGaAs interfaces)

Wipakorn Jevasuwan, Tatsuro Maeda, Noriyuki Miyata, Minoru Oda, Toshifumi Irisawa, Tsutomu Tezuka, Tetsuji Yasuda.

Applied Physics Express 7 [1] 011201. 2014.

https://doi.org/10.7567/apex.7.011201

NIMS author(s)

JEVASUWAN, Wipakorn

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2016-05-24 17:44:12 +0900Updated at: 2024-04-01 22:42:56 +0900

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