Atomic layer deposition of high-k Y2O3 on h-BN for a gate stack in graphene FETs

Atomic layer deposition of Y2O3onh-BN for a gate stack in graphene FETs
(Atomic layer deposition of high-k Y2O3 on h-BN for a gate stack in graphene FETs)

著者	N Takahashi, K Watanabe, T Taniguchi, K Nagashio.
掲載誌名	Nanotechnology 26 [17] 175708 ISSN: 13616528, 09574484 ESIでのカテゴリ: MATERIALS SCIENCE
出版社	IOP Publishing
発表年	2015
言語	English
DOI	https://doi.org/10.1088/0957-4484/26/17/175708
この文献をMendeleyにインポート