Insight into traps at Al2O3/p-GaN metal-oxide-semiconductor interface fabricated on free-standing GaN substrate | SAMURAI, NIMS Researchers Directory Service

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Insight into traps at Al2O3/p-GaN metal-oxide-semiconductor interface fabricated on free-standing GaN substrate

Liwen Sang, Bing Ren, Toshihide Nabatame, Masatomo Sumiya, Meiyong Liao.

Journal of Alloys and Compounds 853 157356. 2021.

https://doi.org/10.1016/j.jallcom.2020.157356

Open Access Elsevier BV (Publisher)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2020-10-06 03:00:19 +0900Updated at: 2024-03-31 02:00:56 +0900

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