Gate-Defined Accumulation-Mode Quantum Dots in Monolayer and Bilayer 
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mrow><mml:mi mathvariant="normal">W</mml:mi><mml:mi>Se</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:math>

Gate-Defined Accumulation-Mode Quantum Dots in Monolayer and Bilayer WSe2
(Gate-defined, Accumulation-mode Quantum Dots in Monolayer and Bilayer WSe2)

Author(s)	S. Davari, J. Stacy, A.M. Mercado, J.D. Tull, R. Basnet, K. Pandey, K. Watanabe, T. Taniguchi, J. Hu, H.O.H. Churchill.
Journal title	Physical Review Applied 13 [5] 054058 ISSN: 23317019 ESI category: PHYSICS
Publisher	American Physical Society (APS)
Year of publication	2020
Language	English
DOI	https://doi.org/10.1103/physrevapplied.13.054058
Import this reference to Mendeley