HOME > Article > DetailElectrical property improvement for boron-doped diamond metal–oxide–semiconductor field-effect transistorsJ. W. Liu, T. Teraji, B. Da, Y. Koide. Applied Physics Letters 124 [7] 072103. 2024.https://doi.org/10.1063/5.0194424 NIMS author(s)LIU, JiangweiTERAJI, TokuyukiDA, BoKOIDE, YasuoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2024-02-16 03:11:40 +0900Updated at: 2024-10-13 08:50:36 +0900