HOME > Article > DetailSilicon-doped indium oxide – a promising amorphous oxide semiconductor material for thin-film transistor fabricated by spin coating methodHa Hoang, Kazutaka Sasaki, Tatsuki Hori, Kazuhito Tsukagoshi, Toshihide Nabatame, Bui Nguyen Quoc Trinh, Akihiko Fujiwara. IOP Conference Series: Materials Science and Engineering 625 012002. 2019.https://doi.org/10.1088/1757-899x/625/1/012002 Open Access IOP Publishing (Publisher) NIMS author(s)TSUKAGOSHI, KazuhitoNABATAME, ToshihideFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2019-10-19 03:01:14 +0900Updated at: 2024-03-30 23:56:37 +0900