Enhanced computing performance of MoS2-based Raman-ion-gating reservoir achieved by combining reservoir states from current response and resonant Raman scattering

Yoshitaka Shingaya; Daiki Nishioka; Kazuya Terabe; Takashi Tsuchiya; Yoshitaka Shingaya; Daiki Nishioka; Kazuya Terabe; Takashi Tsuchiya

doi:10.1063/5.0266816

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Enhanced computing performance of MoS2-based Raman-ion-gating reservoir achieved by combining reservoir states from current response and resonant Raman scattering

Yoshitaka Shingaya, Daiki Nishioka, Kazuya Terabe, Takashi Tsuchiya.

Applied Physics Letters 127 [17] 173503. 2025.

https://doi.org/10.1063/5.0266816

Open Access AIP Publishing (Publisher) Materials Data Repository (MDR)

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Introduction to new articles

MoS₂-based Raman-ion-gating reservoir enabling miniaturization and high performance in physical reservoirs

We fabricated an electric double-layer transistor using a MoS₂ channel and a lithium-ion-conductive solid electrolyte, and utilized it for physical reservoir computing. Since the resonant Raman scattering spectrum of MoS₂ exhibits gate voltage dependence, the Raman scattering signal can be used as the reservoir state. By utilizing both the Raman signal and the current response as computational resources, we achieved high computational performance despite the fine single-channel device with a channel length and width of several micrometers.

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Created at: 2025-11-05 03:09:17 +0900 Updated at: 2026-08-14 04:32:27 +0900