Electron and hole doping of monolayer 
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>WSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>
 induced by twisted ferroelectric hexagonal boron nitride

J. Fraunié; R. Jamil; R. Kantelberg; S. Roux; L. Petit; E. Lepleux; L. Pacheco; K. Watanabe; T. Taniguchi; V. Jacques; L. Lombez; M. M. Glazov; B. Lassagne; X. Marie; C. Robert; J. Fraunié; R. Jamil; R. Kantelberg; S. Roux; L. Petit; E. Lepleux; L. Pacheco; K. Watanabe; T. Taniguchi; V. Jacques; L. Lombez; M. M. Glazov; B. Lassagne; X. Marie; C. Robert

doi:10.1103/physrevmaterials.7.l121002

Electron and hole doping of monolayer WSe2 induced by twisted ferroelectric hexagonal boron nitride

J. Fraunié, R. Jamil, R. Kantelberg, S. Roux, L. Petit, E. Lepleux, L. Pacheco, K. Watanabe, T. Taniguchi, V. Jacques, L. Lombez, M. M. Glazov, B. Lassagne, X. Marie, C. Robert.

Physical Review Materials 7 [12] L121002. 2023.

https://doi.org/10.1103/physrevmaterials.7.l121002

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2024-01-09 03:08:13 +0900 Updated at: 2026-06-04 08:23:25 +0900