Droplet epitaxy growth of telecom InAs quantum dots on metamorphic InAlAs/GaAs(111)A

Neul Ha; Takaaki Mano; Takashi Kuroda; Kazutaka Mitsuishi; Akihiro Ohtake; Andrea Castellano; Stefano Sanguinetti; Takeshi Noda; Yoshiki Sakuma; Kazuaki Sakoda; Neul Ha; Takaaki Mano; Takashi Kuroda; Kazutaka Mitsuishi; Akihiro Ohtake; Andrea Castellano; Stefano Sanguinetti; Takeshi Noda; Yoshiki Sakuma; Kazuaki Sakoda

doi:10.7567/jjap.54.04dh07

Droplet epitaxy growth of telecom InAs quantum dots on metamorphic InAlAs/GaAs(111)A

Neul Ha, Takaaki Mano, Takashi Kuroda, Kazutaka Mitsuishi, Akihiro Ohtake, Andrea Castellano, Stefano Sanguinetti, Takeshi Noda, Yoshiki Sakuma, Kazuaki Sakoda.

Japanese Journal of Applied Physics 54 [4S] 04DH07. 2015.

https://doi.org/10.7567/jjap.54.04dh07

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2016-05-24 17:35:17 +0900Updated at: 2025-01-16 05:40:43 +0900