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In-situ determination of the Carrier Concentration by Reflectance Anisotropy Spectroscopy
(その場反射率差分分光法によるIII-V族半導体の表面と不純物測定)

Pristovsek Markus, TSUKAMOTO, Shiro, KOGUCHI, Nobuyuki, B. Han, K. Haberland, J.-T. Zettler, W. Richter, M. Zorn, M. Weyers.
physica status solidi A . 2001.

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      Created at: 2022-09-05 11:07:02 +0900 Updated at: 2022-09-05 11:07:02 +0900

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