HOME > Article > DetailDopant dependence on passivation and reactivation of carrier after hydrogenation(水素処理によるシリコン中にドープされたキャリアの活性化および不活性化のドーパント依存性)N. Fukata, S. Sato, H. Morihiro, K. Murakami, K. Ishioka, M. Kitajima, S. Hishita. Journal of Applied Physics 101 [4] 046107. 2007.https://doi.org/10.1063/1.2654831 NIMS author(s)FUKATA, NaokiISHIOKA, KunieHISHITA, ShunichiFulltext and dataset(s) on Materials Data Repository (MDR)Created at :2016-05-24 15:10:53 +0900 Updated at :2020-11-16 23:10:53 +0900