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Dopant dependence on passivation and reactivation of carrier after hydrogenation
(水素処理によるシリコン中にドープされたキャリアの活性化および不活性化のドーパント依存性)

N. Fukata, S. Sato, H. Morihiro, K. Murakami, K. Ishioka, M. Kitajima, S. Hishita.
Journal of Applied Physics 101 [4] 046107. 2007.

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