Low-temperature redestribution of As in Si during Ni Silicide formation

M.Akiyama; T.Maeda; M.Hori; C.Takebayashi; A.Ogura; T.Chikyow; I.Kimura; K.Yoneda; K.N.Tu; I. Ohdomari; M. Akiyama; T. Maeda; M. Hori; C. Takebayashi; A. Ogura; T. Chikyo; I. Kimura; K. Yoneda; K. N. Tu; M.Akiyama; T.Maeda; M.Hori; C.Takebayashi; A.Ogura; T.Chikyow; I.Kimura; K.Yoneda; K.N.Tu; I. Ohdomari; M. Akiyama; T. Maeda; M. Hori; C. Takebayashi; A. Ogura; T. Chikyo; I. Kimura; K. Yoneda; K. N. Tu

doi:10.1063/1.333801

Low-temperature redestribution of As in Si during Ni Silicide formation

M.Akiyama, T.Maeda, M.Hori, C.Takebayashi, A.Ogura, T.Chikyow, I.Kimura, K.Yoneda, K.N.Tu, I. Ohdomari, M. Akiyama, T. Maeda, M. Hori, C. Takebayashi, A. Ogura, T. Chikyo, I. Kimura, K. Yoneda, K. N. Tu.

Journal of Applied Physics 56 [10] 2725-2728. 1984.

https://doi.org/10.1063/1.333801

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2016-05-24 11:22:44 +0900 Updated at: 2025-10-20 04:53:38 +0900