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Persistent excited conductivity and the threshold fluence in a-Si:H under 17 MeV proton irradiation
(17MeV陽子線照射したa-Si:Hにおける永続的伝導とその閾値線量)

AMEKURA, Hiroshi, 岸本直樹, KONO, Kenichiro, 近藤明弘.

NIMS author(s)


Fulltext and dataset(s) on Materials Data Repository (MDR)


    Created at: 2022-11-15 00:39:27 +0900 Updated at: 2022-11-15 00:39:27 +0900

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