HOME > Article > DetailFerroelectricity of HfxZr1−xO2 Thin Films Fabricated Using TiN Stressor and ZrO2 Nucleation TechniquesTakashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Kazunori Kurishima, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura. ECS Transactions 86 [6] 31-38. 2018.https://doi.org/10.1149/08606.0031ecst NIMS author(s)NABATAME, ToshihideOHI, AkihikoIKEDA, NaokiNAGATA, TakahiroFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2019-03-01 11:36:50 +0900Updated at: 2025-01-09 06:02:03 +0900