3D impurity profiles of doped/intrinsic amorphous-silicon layers composing textured silicon heterojunction solar cells detected by atom probe tomography

Yasuo Shimizu; Bin Han; Naoki Ebisawa; Yoshinari Ichihashi; Taiki Hashiguchi; Hirotaka Katayama; Mitsuhiro Matsumoto; Akira Terakawa; Koji Inoue; Yasuyoshi Nagai; Yasuo Shimizu; Bin Han; Naoki Ebisawa; Yoshinari Ichihashi; Taiki Hashiguchi; Hirotaka Katayama; Mitsuhiro Matsumoto; Akira Terakawa; Koji Inoue; Yasuyoshi Nagai

doi:10.35848/1882-0786/abcd70

3D impurity profiles of doped/intrinsic amorphous-silicon layers composing textured silicon heterojunction solar cells detected by atom probe tomography

Yasuo Shimizu, Bin Han, Naoki Ebisawa, Yoshinari Ichihashi, Taiki Hashiguchi, Hirotaka Katayama, Mitsuhiro Matsumoto, Akira Terakawa, Koji Inoue, Yasuyoshi Nagai.

Applied Physics Express 13 [12] 126503. 2020.

https://doi.org/10.35848/1882-0786/abcd70

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2020-12-15 03:00:16 +0900 Updated at: 2026-05-02 04:59:33 +0900