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Development of wide band gap p-a-SiOxCy:H using additional trimethylboron as carbon source gas
(カーボンソースとしてトリメチルボロンを添加する手法によるワイドバンドギャップP型a-SiOxCy:H の開発)

Dong-Won Kang, Porponth Sichanugrist, Bancha Janthong, Muhammad Ajmal Khan, Chisato Niikura, Makoto Konagai.
Electronic Materials Letters 12 [4] 462-467. 2016.
https://doi.org/10.1007/s13391-016-4007-y

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