Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage
(Highly stable, dual-gated MoS2 transistors encapsulated by hexagonal boron nitride with gate-controllable contact resistance and threshhold votage)
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2016-05-24 17:52:56 +0900Updated at: 2024-04-01 19:23:42 +0900