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High-Performance Indium Gallium Tin Oxide Transistors with an Al2O3 Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: Roles of Hydrogen and Excess Oxygen in the Al2O3 Dielectric Film

Cheol Hee Choi, Taikyu Kim, Shigenori Ueda, Yu-Shien Shiah, Hideo Hosono, Junghwan Kim, Jae Kyeong Jeong.
ACS Applied Materials & Interfaces 13 [24] 28451-28461. 2021.

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    Created at :2021-08-17 03:00:17 +0900 Updated at :2022-05-10 12:00:09 +0900

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