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High-Performance Indium Gallium Tin Oxide Transistors with an Al2O3 Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: Roles of Hydrogen and Excess Oxygen in the Al2O3 Dielectric Film

Author(s)Cheol Hee Choi, Taikyu Kim, Shigenori Ueda, Yu-Shien Shiah, Hideo Hosono, Junghwan Kim, Jae Kyeong Jeong.
Journal titleACS Applied Materials & Interfaces 13 [24] 28451-28461
ISSN: 19448244, 19448252
Publisher
Year of publication2021
LanguageEnglish
DOIhttps://doi.org/10.1021/acsami.1c04210
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