Band bending at heterovalent interfaces: Hard X-ray photoelectron spectroscopy of GaP/Si(0 0 1) heterostructures

O. Romanyuk; A. Paszuk; I. Bartoš; R.G. Wilks; M. Nandy; J. Bombsch; C. Hartmann; R. Félix; S. Ueda; I. Gordeev; J. Houdkova; P. Kleinschmidt; P. Machek; M. Bär; P. Jiříček; T. Hannappel; O. Romanyuk; A. Paszuk; I. Bartoš; R.G. Wilks; M. Nandy; J. Bombsch; C. Hartmann; R. Félix; S. Ueda; I. Gordeev; J. Houdkova; P. Kleinschmidt; P. Machek; M. Bär; P. Jiříček; T. Hannappel

doi:10.1016/j.apsusc.2021.150514

Band bending at heterovalent interfaces: Hard X-ray photoelectron spectroscopy of GaP/Si(0 0 1) heterostructures

O. Romanyuk, A. Paszuk, I. Bartoš, R.G. Wilks, M. Nandy, J. Bombsch, C. Hartmann, R. Félix, S. Ueda, I. Gordeev, J. Houdkova, P. Kleinschmidt, P. Machek, M. Bär, P. Jiříček, T. Hannappel.

Applied Surface Science 565 150514. 2021.

https://doi.org/10.1016/j.apsusc.2021.150514

NIMS author(s)

UEDA, Shigenori

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2021-07-27 03:00:18 +0900 Updated at: 2025-12-28 04:45:11 +0900