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High-mobility n−-GaN drift layer grown on Si substrates

著者Jianfei Shen, Xuelin Yang, Huayang Huang, Danshuo Liu, Zidong Cai, Zhenghao Chen, Cheng Ma, Fujun Xu, Liwen Sang, Xinqiang Wang, Weikun Ge, Bo Shen.
掲載誌名Applied Physics Letters 118 [22] 222106
ISSN: 00036951, 10773118
ESIでのカテゴリ: PHYSICS
出版社
発表年2021
言語English

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