HOME > Article > DetailBoron-doped diamond MOSFETs operating at temperatures up to 400°CJiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide. Functional Diamond 5 [1] 2450513. 2025.https://doi.org/10.1080/26941112.2025.2450513 Open Access Informa UK Limited (Publisher) Materials Data Repository (MDR) NIMS author(s)LIU, JiangweiTERAJI, TokuyukiDA, BoFulltext and dataset(s) on Materials Data Repository (MDR)MDRavailable Boron-doped diamond MOSFETs operating at temperatures up to 400°C Created at: 2025-03-06 03:06:25 +0900 Updated at: 2025-11-14 04:30:44 +0900
