Effective Hexagonal Boron Nitride Passivation of Few-Layered InSe and GaSe to Enhance Their Electronic and Optical Properties

Himani Arora; Younghun Jung; Tommaso Venanzi; Kenji Watanabe; Takashi Taniguchi; René Hübner; Harald Schneider; Manfred Helm; James C. Hone; Artur Erbe; Himani Arora; Younghun Jung; Tommaso Venanzi; Kenji Watanabe; Takashi Taniguchi; René Hübner; Harald Schneider; Manfred Helm; James C. Hone; Artur Erbe

doi:10.1021/acsami.9b13442

Effective Hexagonal Boron Nitride Passivation of Few-Layered InSe and GaSe to Enhance Their Electronic and Optical Properties
(Effective hexagonal boron nitride passivation of few-layered InSe and GaSe to enhance their electronic and optical properties)

Himani Arora, Younghun Jung, Tommaso Venanzi, Kenji Watanabe, Takashi Taniguchi, René Hübner, Harald Schneider, Manfred Helm, James C. Hone, Artur Erbe.

ACS Applied Materials & Interfaces 11 [46] 43480-43487. 2019.

https://doi.org/10.1021/acsami.9b13442

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2019-12-10 03:00:20 +0900Updated at: 2024-03-31 01:06:15 +0900

Effective Hexagonal Boron Nitride Passivation of Few-Layered InSe and GaSe to Enhance Their Electronic and Optical Properties(Effective hexagonal boron nitride passivation of few-layered InSe and GaSe to enhance their electronic and optical properties)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Effective Hexagonal Boron Nitride Passivation of Few-Layered InSe and GaSe to Enhance Their Electronic and Optical Properties
(Effective hexagonal boron nitride passivation of few-layered InSe and GaSe to enhance their electronic and optical properties)