Nanometer-thin ALD-Al2O3for the improvement of the structural quality of AlN grown on sapphire substrate by MOVPE | SAMURAI, NIMS Researchers Directory Service

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Nanometer-thin ALD-Al2O3for the improvement of the structural quality of AlN grown on sapphire substrate by MOVPE
(Nanometer-thin ALD-Al2O3 for the improvement of the structural quality of AlN grown on sapphire substrate by MOVPE)

Ryan G. Banal, Masataka Imura, Daiju Tsuya, Hideo Iwai, Yasuo Koide.

physica status solidi (a) 214 [2] 1600727. 2017.

https://doi.org/10.1002/pssa.201600727

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Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2017-06-27 22:18:01 +0900Updated at: 2024-04-01 22:40:06 +0900

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