Influence of HfO<sub>2</sub> and SiO<sub>2</sub> interfacial layers on the characteristics of n-GaN/HfSiO<i><sub>x</sub></i> capacitors using plasma-enhanced atomic layer deposition | SAMURAI, NIMS Researchers Directory Service

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Influence of HfO2 and SiO2 interfacial layers on the characteristics of n-GaN/HfSiOx capacitors using plasma-enhanced atomic layer deposition
(Influence of HfO2 and SiO2 interfacial layers on the characteristics of n-GaN/HfSiOx capacitors using plasma-enhanced atomic layer deposition)

Toshihide Nabatame, Erika Maeda, Mari Inoue, Masafumi Hirose, Yoshihiro Irokawa, Akihiko Ohi, Naoki Ikeda, Takashi Onaya, Koji Shiozaki, Ryota Ochi, Tamotsu Hashizume, Yasuo Koide.

Journal of Vacuum Science & Technology A 39 [6] 062405. 2021.

https://doi.org/10.1116/6.0001334

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2021-12-23 15:42:42 +0900Updated at: 2024-03-31 13:59:16 +0900

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