Interface trap characterization of Al2O3/GaN vertical-type MOS capacitors on GaN substrate with surface treatments | SAMURAI, NIMS Researchers Directory Service

HOME > Article > Detail

Interface trap characterization of Al2O3/GaN vertical-type MOS capacitors on GaN substrate with surface treatments

Bing Ren, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Xinke Liu, Yue Shen, Liwen Sang.

Journal of Alloys and Compounds 767 600-605. 2018.

https://doi.org/10.1016/j.jallcom.2018.07.150

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2019-03-01 12:15:44 +0900Updated at: 2024-04-02 01:43:24 +0900

▲ Go to the top of this page