Emergence of superconductivity in Th <sub>3</sub> P <sub>4</sub> -type Sn <sub>3</sub> Se <sub>4</sub> and Ge <sub>3</sub> S <sub>4</sub> under high pressure synthesized by diamond anvil cell with boron-doped diamond electrodes | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Emergence of superconductivity in Th ₃ P ₄ -type Sn ₃ Se ₄ and Ge ₃ S ₄ under high pressure synthesized by diamond anvil cell with boron-doped diamond electrodes

Ryo Matsumoto, Satoshi Nakano, Kensei Terashima, Toru Shinmei, Tetsuo Irifune, Motoharu Imai, Yoshihiko Takano.

Science and Technology of Advanced Materials 27 [1] 2705815. 2026.

https://doi.org/10.1080/14686996.2026.2705815

Open Access Informa UK Limited (Publisher) Materials Data Repository (MDR)

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Materials Data Repository (MDR)上の本文・データセット

MDRavailable Emergence of superconductivity in Th <sub>3</sub> P <sub>4</sub> -type Sn <sub>3</sub> Se <sub>4</sub> and Ge <sub>3</sub> S <sub>4</sub> under high pressure synthesized by diamond anvil cell with boron-doped diamond electrodes

作成時刻: 2026-08-20 03:07:22 +0900 更新時刻: 2026-09-22 04:31:04 +0900

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