Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

Gwan-Hyoung Lee; Young-Jun Yu; Xu Cui; Nicholas Petrone; Chul-Ho Lee; Min Sup Choi; Dae-Yeong Lee; Changgu Lee; Won Jong Yoo; Kenji Watanabe; Takashi Taniguchi; Colin Nuckolls; Philip Kim; James Hone

doi:10.1021/nn402954e

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Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
(Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures)

Gwan-Hyoung Lee, Young-Jun Yu, Xu Cui, Nicholas Petrone, Chul-Ho Lee, Min Sup Choi, Dae-Yeong Lee, Changgu Lee, Won Jong Yoo, Kenji Watanabe, Takashi Taniguchi, Colin Nuckolls, Philip Kim, James Hone.

ACS Nano 7 [9] 7931-7936. 2013.

https://doi.org/10.1021/nn402954e

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Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2016-05-24 17:07:51 +0900更新時刻: 2024-04-02 03:37:00 +0900

Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures(Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
(Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures)