SAMURAI - NIMS Researchers Database

HOME > Article > Detail

Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
(Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures)

Author(s)Gwan-Hyoung Lee, Young-Jun Yu, Xu Cui, Nicholas Petrone, Chul-Ho Lee, Min Sup Choi, Dae-Yeong Lee, Changgu Lee, Won Jong Yoo, Kenji Watanabe, Takashi Taniguchi, Colin Nuckolls, Philip Kim, James Hone.
Journal titleACS Nano 7 [9] 7931-7936
ISSN: 1936086X, 19360851
ESI category: MATERIALS SCIENCE
PublisherAmerican Chemical Society (ACS)
Year of publication2013
LanguageEnglish
DOIhttps://doi.org/10.1021/nn402954e
Import this reference to MendeleyMendeley

▲ Go to the top of this page