Improvement of strained InGaN solar cell performance with a heavily doped n+-GaN substrate | SAMURAI, NIMS Researchers Directory Service

HOME > Article > Detail

Improvement of strained InGaN solar cell performance with a heavily doped n+-GaN substrate
(Improvement of strained InGaN solar cell performance with a heavily doped n-GaN substrate)

Masatomo Sumiya, Tohru Honda, Liwen Sang, Yoshitaka Nakano, Kenji Watanabe, Fumio Hasegawa.

physica status solidi (a) 212 [5] 1033-1038. 2015.

https://doi.org/10.1002/pssa.201431732

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2016-05-24 18:06:20 +0900Updated at: 2024-03-29 18:29:04 +0900

▲ Go to the top of this page