HOME > Article > DetailTuning minority-carrier lifetime through stacking fault defects: The case of polytypic SiCBin Chen, Hirofumi Matsuhata, Takashi Sekiguchi, Akimasa Kinoshita, Kyouichi Ichinoseki, Hajime Okumura. Applied Physics Letters 100 [13] 132108. 2012.https://doi.org/10.1063/1.3700963 NIMS author(s)Fulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2016-05-24 16:40:20 +0900Updated at: 2024-03-31 12:40:57 +0900
