HOME > Article > DetailEvaluation of minority-carrier diffusion length in n-type beta-FeSi2 single crystals by electron-beam-induced currentTeruhisa Ootsuka, Takashi Suemasu, Jun Chen, Takashi Sekiguchi. Applied Physics Letters 92 [4] 042117. 2008.https://doi.org/10.1063/1.2835904 NIMS author(s)CHEN, JunFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2016-05-24 15:29:59 +0900Updated at: 2024-04-01 18:20:08 +0900