Improvement of subthreshold current transport by contact interface modification in p-type organic field-effect transistors | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Improvement of subthreshold current transport by contact interface modification in p-type organic field-effect transistors
(サブスレショルド電流の端子界面による向上に関して)

Masataka Kano, Takeo Minari, Kazuhito Tsukagoshi.

Applied Physics Letters 94 [14] 143304. 2009.

https://doi.org/10.1063/1.3115826

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作成時刻: 2016-05-24 15:45:14 +0900更新時刻: 2025-01-10 05:30:38 +0900

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