HOME > Article > DetailSi(100)基板上Ge量子ドットの成長制御 -極微量C原子による量子ドットのサイズ・密度・構造の制御-(Quantum dot growth of Ge on Si(100) -Control in Ge dot structure on nanometer scale by sub-monolayer C deposition-)若山裕. 日本結晶成長学会誌 45-52. 2001.NIMS author(s)WAKAYAMA, YutakaFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2022-09-05 11:06:15 +0900Updated at: 2022-09-05 11:06:15 +0900