HOME > Article > DetailElectronic transport properties of GeS single crystals grown by vapor transport from molten GeS sourceMasaru Nakamura, Encarnación G. Víllora, Takeo Ohsawa, Kiyoshi Shimamura, Naoki Ohashi. Journal of Crystal Growth 609 127153. 2023.https://doi.org/10.1016/j.jcrysgro.2023.127153 NIMS author(s)NAKAMURA, MasaruOHSAWA, TakeoSHIMAMURA, KiyoshiOHASHI, NaokiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2023-03-05 03:37:13 +0900Updated at: 2024-04-02 05:33:40 +0900