Effect of Y Content in (TaC)$_{1-x}$Y$_{x}$ Gate Electrodes on Flatband Voltage Control for Hf-Based High-$k$ Gate Stacks | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Effect of Y Content in (TaC)$_{1-x}$Y$_{x}$ Gate Electrodes on Flatband Voltage Control for Hf-Based High-$k$ Gate Stacks
(Effect of Y Content in (TaC)1-xYx Gate Electrodes on Flatband Voltage Control for Hf-Based High-k Gate Stacks)

Pattira Homhuan, Toshihide Nabatame, Toyohiro Chikyow, Sukkaneste Tungasmita.

Japanese Journal of Applied Physics 50 [10] 10PA03. 2011.

https://doi.org/10.1143/jjap.50.10pa03

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作成時刻: 2016-05-24 16:19:47 +0900 更新時刻: 2025-03-19 04:40:37 +0900

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