酸化ガリウム半導体の分子線エピタキシー（MBE）成長とショットキーダイオード
(Molecular Beam Epitaxy of Semiconducting Gallium Oxide and its Application to Schottky Barrier Diodes)
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2016-05-24 16:54:10 +0900Updated at: 2018-12-15 01:10:50 +0900