NARA, Jun

Profile
Last Update : 2016/03/31
Portrait
NARA, Jun
Senior Researcher,  First-Principles Simulation Group, MANA,  National Institute for Materials Science
Email: NARA.Junnims.go.jp
Phone: +81-29-860-4962
1-1 Namiki, Tsukuba, Ibaraki, 305-0044 JAPAN [Location]
Thumbnail abstract
printImage
Publications NIMS affiliated publications since 2004.
Research papers
  • Y. ONO, J. Nara, T. Ohno : “Structural Stability and Electronic Structures of a Curved Graphene Sheet on Stepped SiC(0001) Surface” J. Phys. Soc. Jpn. 85[3] (2016) 034707-1 DOI:10.7566/JPSJ.85.034707
  • N. Tajima, T. KANEKO, J. Nara, T. Ohno : “Carbon atom reactions in the initial stage of CVD graphene growth on copper: a first principles study” Jpn. J. Appl. Phys 53[5S1] (2014) 05FD08-1 DOI:10.7567/JJAP.53.05FD08
  • Y. Asari, J. Nara, T. Ohno : “First-principles study of chlorine atom diffusion on Si(1 1 1)–5 ×5 reconstructed surfaces” Appl. Surf. Sci. 267[15] (2013) 70-73 DOI:10.1016/j.apsusc.2012.07.015
more...
Conferences
  • N. Tajima, T. KANEKO, J. Nara, T. Ohno : “A first principles study on CVD graphene growth on copper surface: C-C bonding reactions at graphene edges” SSDM2014 EXTENDED ABSTRACT OF SOLID STATE DEVICE MATERIALS USB (2014) 346-347
  • Y. Asari, Y. Suwa, T. Hamada, V. Dinh, J. Nara, T. Ohno : “First-Principles Study of Charge Compensation in Olivine Positive” 220th ECS Meeting and Electrochemical Energy Summit ECS TRANSACTIONS 41[41] (2012) 115-127
  • V. Dinh, J. Nara, T. Ohno, Asari Y, Suwa Y, Hamada T : “Vacancy Formation and Attractive Interaction between Vacancies and Chlorine in Chlorine-Doped LiFePO4” IEEE Nanotechnology Materials and Devices Conference Proceedings of NMDC2011 1 (2011) 190-193
more...
Presentations, others
  • Sep. 21-25, 2009 : J. Nara, Y. Asari, T. Ohno : “First-Principles Study on the mechanism of Halogen atom diffusion on Si(111) surface” 10th International Conference on Atomically Controlled Surfaces
  • Apr. 13-17, 2009 : J. Nara, A. Ohtake, T. Ohno : “Initial growth structure of Ge on GaAs(001)” 2009 MRS Spring Meeting
  • Mar. 27-30, 2009 : 近藤恒, 奈良純, 大野隆央 : “第一原理計算によるビフェニル分子架橋系の伝導特性” 日本物理学会第64回年次大会
more...
Patents
  • No. CN102239549A “The method for manufacturing the semiconductor device, semiconductor device and the method for manufacturing the semiconductor substrate and the semiconductor substrate” (2011)
  • No. US20110233689A1 “SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, SEMICONDUCTOR SUBSTRATE, AND PROCESS FOR PRODUCING SEMICONDUCTOR SUBSTRATE” (2011)
  • No. KR2011091507A “SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, SEMICONDUCTOR SUBSTRATE, AND PROCESS FOR PRODUCING SEMICONDUCTOR SUBSTRATE” (2011)
more...
External references
ResearcherID.COM (No.H-2831-2011)
NIMS Researchers