IROKAWA, Yoshihiro

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Last Update : 2015/10/08
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IROKAWA, Yoshihiro
Senior Researcher,  Wide Bandgap Materials Group, RCFM,  National Institute for Materials Science
1-1 Namiki, Tsukuba, Ibaraki, 305-0044 JAPAN [Location]
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Other Affiliations
(TBD), Center for GaN Characterization and Analysis, RNFS
Unassigned, Optical and Electric Characterization Group, Center for GaN Characterization and Analysis, RNFS
Publications NIMS affiliated publications since 2004.
Research papers
  • N. Matsuki, Y. Irokawa, T. Matsui, M. Kondo and M. Sumiya : “Photovoltaic Action in Polyaniline/n-GaN Schottky Diodes” APEX 2[9] (2009) 092201-1 DOI:10.1143/APEX.2.092201
  • Y. Irokawa, N. Matsuki, M. Sumiya, Y. Sakuma, T. Sekiguchi, T. Chikyo, Sumida Yasunobu, Yoshitaka Nakano : “Low-frequency capacitance-voltage study of hydrogen interaction with Pt-AlGaN/GaN Schottky barrier diodes” Phys. Status Solidi-Rapid Res. Lett. 3[7-8] (2009) 266-268
  • Y. Nakano, Y. Irokawa and M. Takeguchi : “Deep-Level Optical Spectroscopy Investigation of Band Gap States in AlGaN/GaN Hetero-Interfaces” APEX 1[9] (2008) 091101-1 DOI:10.1143/APEX.1.091101
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Books
  • 色川芳宏, T. Morikawa, K. Aoki, S. Kosaka, T. Ohwaki, Y. Taga : “光化学反応解析と中間生成物について” 会報 光触媒 (2006)
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Conferences
  • Y. Irokawa, N. Matsuki, M. Sumiya, Y. Sakuma, T. Sekiguchi, T. Chikyo, S. Yasunobu, Y. Nakano : “Anomalous Capacitance-Voltage Characteristics of Pt-AlGaN/GaN Schottky diodes exposed to hydrogen” The 8th International Conference on Nitride Semiconductors PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS 7[7-8] (2010) 1928-1930
  • Y. Nakano, N. Matsuki, Y. Irokawa, M. Sumiya : “Electrical characterization of n-GaN epilayers using transparent polyanil Schottky contacts” 8th International Conference on Nitride Semiconductors PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS 7[7-8] (2010) 2007-2009
  • M. Takeguchi, H. Okuno, K. Mitsuishi, Y. Irokawa, Y. Sakuma, K. Furuya : “Electron Holography Observation of AlInGaN/GaN Heterointerfaces” The 9th Asia-Pacific Conference on Electron Microscopy Proceedings of The 9th Asia-Pacific Conference on Electron Microscopy (2009) 255-256
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Presentations, others
  • Oct. 18-23, 2009 : Y. Nakano, K. Nakamura, Y. Irokawa, M. Takeguchi : “Interface States in AlGaN/GaN Hetero-Structure Probed by Deep-Level Optical Spectroscopy” 8th International Conference on Nitride Semiconductors (ICNS-8)
  • Oct. 07-09, 2009 : N. Matsuki, Y. Nakano, Y. Irokawa, M. Sumiya : “Electrical Interface Structure of Schottky Junctions by π-conjugated Polymer/III-nitride Hetero Structure” SSDM 2009
  • Sep. 13-17, 2009 : Y. Nakano, K. Nakamura, Y. Irokawa, M. Takeguchi : “Band Gap States in AlGaN/GaN Hetero-Interface Studied by Deep-Level Optical Spectroscopy” 13th International Conference on Defects - Recognition Imaging
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Patents
  • No. KR2011136853A “The schottky type junction device, the photoelectric conversion element using the same and solar cell.” (2011)
  • No. WO2010110475A1 “SHOT KEY-TYPE JUNCTION ELEMENT AND PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL USING THE SAME” (2010)
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External references
ResearcherID.COM (No.H-2898-2011)
NIMS Researchers