CHIKYO, Toyohiro

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CHIKYO, Toyohiro
MANA Principal Investigator,  International Center for Materials Nanoarchitectonics(MANA),  National Institute for Materials Science
Email: CHIKYO.Toyohironims.go.jp
Phone: +81-29-860-4725
1-1 Namiki, Tsukuba, Ibaraki, 305-0044 JAPAN [Location]
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Other Affiliations
Unit Director, Nano-Electronic Materials Unit, Nano-Materials Field, MANA
Group Leader, Semiconductor Device Materials Group, Nano-Electronic Materials Unit, Nano-Materials Field, MANA
Researcher, Materials Database, Materials Information Station
Manager, NIMS Saint-Gobain Center of Excellence for Advanced Materials, External Collaboration Division
Publications NIMS affiliated publications since 2004.
Research papers
  • R. Hayakawa, X. Zhang, H. Dosch, N. Hiroshiba, T. Chikyow and Y. Wakayama : “ Stress Release Drives Growth Transition of Quaterrylene Thin Films on SiO 2 Surfaces ” J. Phys. Chem. C 113[6] (2009) 2197-2199 DOI:10.1021/jp809556p
  • T. Nagata, M. Haemori, Y. Sakuma, T. Chikyow, J. Anzai and T. Uehara : “Hydrogen effect on near-atmospheric nitrogen plasma assisted chemical vapor deposition of GaN film growth” J. Appl. Phys. 105[6] (2009) 066106-1 DOI:10.1063/1.3086715
  • T. Nagata, M. Haemori and T. Chikyow : “Capability of focused Ar ion beam sputtering for combinatorial synthesis of metal films” J. Vac. Sci. Technol. A-Vac. Surf. Films 27[3] (2009) 492-495 DOI:10.1116/1.3097847
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Books
  • 知京豊裕 : “高誘電体ナノ材料” ナノテクノロジー大事典 (2003)
  • 知京豊裕 : “分子線エピタキシー” ナノテクノロジー大事典 (2003)
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Conferences
  • Y. Irokawa, N. Matsuki, M. Sumiya, Y. Sakuma, T. Sekiguchi, T. Chikyo, 外部, 外部 : “Anomalous Capacitance-Voltage Characteristics of Pt-AlGaN/GaN Schottky diodes exposed to hydrogen” The 8th International Conference on Nitride Semiconductors PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS 7[7-8] (2010) 1928-1930
  • Y. Yamashita, Ohmori K, S. Ueda, H. Yoshikawa, T. Chikyo, K. Kobayashi : “Bias-application in Hard X-ray Photoelectron Spectroscopy for Characterization of Advanced Materials” ALC'09 e-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY 8 (2010) 81-83
  • J. Chen, T. Sekiguchi, N. Fukata, M. Takase, Y. Nemoto, R. Hasunuma, K. Yamabe, M. Sato, K. Yamada, T. Chikyo : “An Electron-Beam-Induced Current Investigation of Electrical Defects in High-k Gate Stacks” 217 th ECS Meeting ECS Transcations 28[2] (2010) 299-313
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Presentations, others
  • Mar. 28-30, 2010 : 生田目俊秀, 原眞一, 大井暁彦, 知京豊裕, 松木武雄, 由上二郎 : “HfO2ゲート絶縁膜中の酸素がフラットバンド電圧シフトへ及ぼす影響” 日本金属学会2010年度春期大会
  • Mar. 20-23, 2010 : 早川竜馬, N/A, N/A, N/A, 廣芝伸哉, 知京豊裕, 若山裕 : “Quaterrylene有機薄膜における格子歪みの制御と成長過程に及ぼす影響” 日本物理学会 第65回年次大会
  • Mar. 17-20, 2010 : 柳生進二郎, 吉武道子, Nataliya Tsud, 知京豊裕 : “Cu(111)及びAg(111)表面でのフェニルリン酸の吸着構造” 第57回応用物理学会関係連合講演会
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Patents
  • No. 4189842 “薄膜素子の製造方法” (2008)
  • No. 4113942 “メモリー構造とその読み出し機構” (2008)
  • No. 3944567 “ゲートならびにCMOS構造およびMOS構造” (2007)
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External references
ResearcherID.COM (No.H-2705-2011)
NIMS Researchers