CHIKYO, Toyohiro

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CHIKYO, Toyohiro
MANA Principal Investigator,  International Center for Materials Nanoarchitectonics(MANA),  National Institute for Materials Science
Email: CHIKYO.Toyohironims.go.jp
Phone: +81-29-860-4725
1-1 Namiki, Tsukuba, Ibaraki, 305-0044 JAPAN [Location]
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Other Affiliations
Unit Director, Nano-Electronic Materials Unit, Nano-Materials Field, MANA
Group Leader, Semiconductor Device Materials Group, Nano-Electronic Materials Unit, Nano-Materials Field, MANA
Researcher, Materials Database, Materials Information Station
Laboratory Director, NIMS Open Innovation Center, External Collaboration Division
Researcher, Information Integrated Materials Data Platform Group, IIMR, CMII
Publications NIMS affiliated publications since 2004.
Research papers
  • R. Hayakawa, X. Zhang, H. Dosch, N. Hiroshiba, T. Chikyow and Y. Wakayama : “ Stress Release Drives Growth Transition of Quaterrylene Thin Films on SiO 2 Surfaces ” J. Phys. Chem. C 113[6] (2009) 2197-2199 DOI:10.1021/jp809556p
  • T. Nagata, M. Haemori, Y. Sakuma, T. Chikyow, J. Anzai and T. Uehara : “Hydrogen effect on near-atmospheric nitrogen plasma assisted chemical vapor deposition of GaN film growth” J. Appl. Phys. 105[6] (2009) 066106-1 DOI:10.1063/1.3086715
  • T. Nagata, M. Haemori and T. Chikyow : “Capability of focused Ar ion beam sputtering for combinatorial synthesis of metal films” J. Vac. Sci. Technol. A-Vac. Surf. Films 27[3] (2009) 492-495 DOI:10.1116/1.3097847
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Books
  • 知京豊裕 : “高誘電体ナノ材料” ナノテクノロジー大事典 (2003)
  • 知京豊裕 : “分子線エピタキシー” ナノテクノロジー大事典 (2003)
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Conferences
  • Y. Irokawa, N. Matsuki, M. Sumiya, Y. Sakuma, T. Sekiguchi, T. Chikyo, S. Yasunobu, Y. Nakano : “Anomalous Capacitance-Voltage Characteristics of Pt-AlGaN/GaN Schottky diodes exposed to hydrogen” The 8th International Conference on Nitride Semiconductors PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS 7[7-8] (2010) 1928-1930
  • Y. Yamashita, Ohmori K, S. Ueda, H. Yoshikawa, T. Chikyo, K. Kobayashi : “Bias-application in Hard X-ray Photoelectron Spectroscopy for Characterization of Advanced Materials” ALC'09 e-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY 8 (2010) 81-83
  • J. Chen, T. Sekiguchi, N. Fukata, M. Takase, Y. Nemoto, R. Hasunuma, K. Yamabe, M. Sato, K. Yamada, T. Chikyo : “An Electron-Beam-Induced Current Investigation of Electrical Defects in High-k Gate Stacks” 217 th ECS Meeting ECS Transcations 28[2] (2010) 299-313
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Presentations, others
  • Mar. 28-30, 2010 : 生田目俊秀, 原眞一, 大井暁彦, 知京豊裕, 松木武雄, 由上二郎 : “HfO2ゲート絶縁膜中の酸素がフラットバンド電圧シフトへ及ぼす影響” 日本金属学会2010年度春期大会
  • Mar. 20-23, 2010 : 早川竜馬, N/A, N/A, N/A, 廣芝伸哉, 知京豊裕, 若山裕 : “Quaterrylene有機薄膜における格子歪みの制御と成長過程に及ぼす影響” 日本物理学会 第65回年次大会
  • Mar. 17-20, 2010 : 柳生進二郎, 吉武道子, Nataliya Tsud, 知京豊裕 : “Cu(111)及びAg(111)表面でのフェニルリン酸の吸着構造” 第57回応用物理学会関係連合講演会
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Patents
  • No. 4189842 “薄膜素子の製造方法” (2008)
  • No. 4113942 “メモリー構造とその読み出し機構” (2008)
  • No. 3944567 “ゲートならびにCMOS構造およびMOS構造” (2007)
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External references
ResearcherID.COM (No.H-2705-2011)
NIMS Researchers